Research related to 6.1 Angstrom materials (III-V semiconductors)
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Many high speed and optoelectronic devices are based on III-V compound semiconductor systems. The morphology of
the interface between different heterolayers can significantly affect the performance of a quantum layer semiconductor
device. It is therefore desirable to control the formation of these interfaces to a high degree of accuracy. In
particular, experimental conditions such as deposition flux and temperature determine the reconstruction on the
surface during epitaxial growth, which in turn influences the adatom dynamics on the surface. We have investigated
both theoretically and eperimentally with our colleagues at HRL Laboratories the surface reconstructions and growth
of InAs(001). More details can be found in
Stability of Surface Reconstructions
on InAs(001)
High resolution kinetic Monte Carlo simulation for InAs(001)
Photoemission as a sensor for surface morphology
Spintronics application (Max and Richard)