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C. Ratsch, M.F. Gyure, R.E. Caflisch, F. Gibou,
M. Petersen, M. Kang, J.R. Garcia, and D.D. Vvedensky, Level-Set Method for Island
Dynamics in Epitaxial Growth, Phys. Rev. B 65, 195403 (2002).
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W. Barvosa-Carter, R.S. Ross, C. Ratsch, F. Grosse,
J.H.G. Owen, and J.J. Zinck, Atomic scale structure of InAs(001)-(2x4) steady-state surfaces
determined by scanning tunneling microscopy and density functional theory, Surface Science 499 (1), L129-L134 (2002).
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F. Grosse and M.F. Gyure, Ab initio-based modeling of III-V
semiconductor surfaces: Thermodynamic equilibrium and growth kinetics on atomic scales, Phys. Rev. B66, 075320 (2002).
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F. Grosse, W. Barvosa-Carter, J. J. Zinck, M.F. Gyure,
Atomistics of III-V semiconductor surfaces: The role of group V pressure, Conference proceedings
NA-MBE, Providence, RI, JVST 20 (3) 1178-1181 (2002).
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F. Grosse, W. Barvosa-Carter, J.J. Zinck, and M.F. Gyure.
Submitted to Phys. Rev. B. Microscopic mechanisms of surface phase transitions on InAs(001),
Phys. Rev. B66, 075321 (2002).
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F. Grosse, W. Barvosa-Carter, M. Wheeler,
J.J. Zinck, and M.F. Gyure, Arsenic Flux Dependence of Island Nucleation on InAs(001), Phys. Rev. Lett. 89, 116102 (2002).
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